cystech electronics corp. spec. no. : c203n3g issued date : 2008.12.26 revised date : page no. : 1/6 BTC2411N3G cystek product specification general purpose npn epitaxial planar transistor BTC2411N3G description ? the BTC2411N3G is designed for using in driver stage of af amplifier and general purpose switching application. ? high i c(max) , i c(max) = 0.6a. ? low v ce(sat) , typ. v ce(sat) = 0.4v at i c /i b = 500ma/50ma. optimal for low voltage operation. ? complementary to bta1036n3g . ? pb-free and halogen-free package symbol outline BTC2411N3G sot-23 b base c collector e emitter absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current i c 0.6 a power dissipation (t a =25 c) p d 225 (note) mw power dissipation (t c =25 c) p d 560 mw thermal resistance, junction to ambient r ja 556 (note) c/w thermal resistance, junction to case r jc 223 c/w junction temperature tj 150 c storage temperature tstg -55~+150 c note : free air condition
cystech electronics corp. spec. no. : c203n3g issued date : 2008.12.26 revised date : page no. : 2/6 BTC2411N3G cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 75 - - v i c =10 a bv ceo 40 - - v i c =10ma bv ebo 6 - - v i e =10 a i cbo - - 10 na v cb =60v i cex - - 10 na v ce =60v, v be =-3v i ebo - - 10 na v eb =3v *v ce(sat) 1 - - 0.5 v i c =380ma, i b =10ma *v ce(sat) 2 - - 0.4 v i c =150ma, i b =15ma *v ce(sat) 3 - - 0.75 v i c =500ma, i b =50ma *v be(sat) 1 0.75 - 0.95 v i c =150ma, i b =15ma *v be(sat) 2 - - 1.2 v i c =500ma, i b =50ma *h fe 1 85 - - v ce =1v, i c =0.1ma *h fe 2 90 - - v ce =1v, i c =1ma *h fe 3 95 - - v ce =1v, i c =10ma *h fe 4 100 - 300 v ce =1v, i c =150ma *h fe 5 40 - - v ce =2v, i c =500ma f t 300 - - mhz v ce =5v, i c =20ma, f=100mhz cob - 6 - pf v cb =5v, f=1mhz *pulse test: pulse width 380 s, duty cycle 2% ordering information device package shipping marking BTC2411N3G sot-23 (pb-free & halogen-free package) 3000 pcs / tape & reel 2x
cystech electronics corp. spec. no. : c203n3g issued date : 2008.12.26 revised date : page no. : 3/6 BTC2411N3G cystek product specification characteristic curves current gain vs collector current 10 100 1000 0.1 1 10 100 1000 collector current ---ic(ma) current gain--- hfe hfe@vce=3v saturation voltage vs collector current 10 100 1000 1 10 100 1000 collector current ---ic(ma) saturation voltage---(mv) vce(sat)@ic=10ib saturation voltage vs collector current 100 1000 0.1 1 10 100 1000 collector current--- ic(ma) saturation voltage---(mv) vbe(sat)@ic=10ib cutoff frequency vs collector current 0.1 1 1 10 100 collector current---ic(ma) cutoff frequency---ft(ghz) ft@vce=5v power derating curve 0 50 100 150 200 250 0 50 100 150 200 ambient temperature --- ta( ) power dissipation---pd(mw)
cystech electronics corp. spec. no. : c203n3g issued date : 2008.12.26 revised date : page no. : 4/6 BTC2411N3G cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c203n3g issued date : 2008.12.26 revised date : page no. : 5/6 BTC2411N3G cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c203n3g issued date : 2008.12.26 revised date : page no. : 6/6 BTC2411N3G cystek product specification sot-23 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. h j k d a l g v c b 3 2 1 s style: pin 1.base 2.emitter 3.collector marking: te 3-lead sot-23 plastic surface mounted package cystek package code: n3 2x dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0034 0.0070 0.085 0.177 b 0.0472 0.0630 1.20 1.60 k 0.0128 0.0266 0.32 0.67 c 0.0335 0.0512 0.89 1.30 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1083 2.10 2.75 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0005 0.0040 0.013 0.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: 42 alloy ; pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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